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| CM75TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six-IGBT IGBTMODTM H-Series Module 75 Amperes/600 Volts X Z - M4 THD (7 TYP.) B uP E uP A C QX S QX N B vP E vP B wP E wP P B uN E uN P B vN E vN B wN E wN P G B E D G U V W N R K J N U T N W AA L M M AA L Y DIA. (4 TYP.) .110 TAB V F H AB P BuP P EuP BvP EvP BwP EwP Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery (70ns) Free-Wheel Diode High Frequency Operation (20-25kHz) Isolated Baseplate for Easy Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM75TF-12H is a 600V (VCES), 75 Ampere Six-IGBT IGBTMODTM Power Module. Type CM Current Rating Amperes 75 VCES Volts (x 50) 12 BuN EuN u N BvN EvN v BwN EwN w N Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N Inches 4.020.02 3.580.02 3.150.01 2.9130.01 1.69 Millimeters 1020.5 91.00.5 80.00.25 74.00.25 43.0 Dimensions P Q R S T U V W X Y Z AA AB Inches 0.65 0.55 0.47 0.43 0.39 0.33 0.32 0.24 Rad. 0.24 0.22 Dia. M4 Metric 0.08 0.28 Millimeters 16.5 14.0 12.0 11.0 10.0 8.5 8.1 Rad. 6.0 6.0 Dia. 5.5 M4 2.0 7.0 1.18+0.06/-0.02 30.0+1.5/-0.5 1.18 1.16 1.06 0.96 0.87 0.79 0.67 30.0 29.5 27.0 24.5 22.0 20.0 17.0 311 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75TF-12H Six-IGBT IGBTMODTM H-Series Module 75 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage Collector Current Peak Collector Current Diode Forward Current Diode Forward Surge Current Power Dissipation Max. Mounting Torque M4 Terminal Screws Max. Mounting Torque M5 Mounting Screws Module Weight (Typical) V Isolation * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Symbol Tj Tstg VCES VGES IC ICM IF IFM Pd - - - VRMS CM75TF-12H -40 to 150 -40 to 125 600 20 75 150* 75 150* 310 13 17 540 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VFM Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 7.5mA, VCE = 10V IC = 75A, VGE = 15V IC = 75A, VGE = 15V, Tj = 150C Total Gate Charge Diode Forward Voltage VCC = 300V, IC = 75A, VGS = 15V IE = 75A, VGS = 0V Min. - - 4.5 - - - - Typ. - - 6.0 2.1 2.15 225 - Max. 1.0 0.5 7.5 2.8** - - 2.8 Units mA A Volts Volts Volts nC Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 75A, diE/dt = -150A/s IE = 75A, diE/dt = -150A/s VCC = 300V, IC = 75A, VGE1 = VGE2 = 15V, RG = 8.3 VGE = 0V, VCE = 10V, f = MHz Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 0.20 Max. 7.5 2.6 1.5 120 300 200 300 110 - Units nF nF nF ns ns ns ns ns Diode Reverse Recovery Time Diode Reverse Recovery Charge C Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. - - - Typ. - - - Max. 0.40 0.90 0.033 Units C/W C/W C/W 312 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75TF-12H Six-IGBT IGBTMODTM H-Series Module 75 Amperes/600 Volts OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 150 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 150 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5 VCE = 10V Tj = 25C Tj = 125C VGE = 15V Tj = 25C Tj = 125C Tj = 25oC VGE = 20V 15 12 4 100 11 100 3 10 2 50 9 7 8 50 1 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 0 50 100 150 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 103 Tj = 25C EMITTER CURRENT, IE, (AMPERES) 101 Tj = 25C CAPACITANCE, Cies, Coes, Cres, (nF) 8 IC = 150A Cies 102 6 IC = 75A 100 Coes 4 101 2 IC = 30A VGE = 0V f = 1MHz Cres 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 100 0 0.8 1.6 2.4 3.2 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 REVERSE RECOVERY TIME, t rr, (ns) 103 VCC = 300V VGE = 15V RG = 8.3 Tj = 125C tf td(off) di/dt = -150A/sec Tj = 25oC 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 16 SWITCHING TIME, (ns) VCC = 200V 102 12 td(on) 102 t rr 101 VCC = 300V 101 8 tr 4 Irr 100 100 101 COLLECTOR CURRENT, IC, (AMPERES) 102 101 100 101 EMITTER CURRENT, IE, (AMPERES) 100 102 0 0 50 100 150 200 250 300 GATE CHARGE, QG, (nC) 313 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75TF-12H Six-IGBT IGBTMODTM H-Series Module 75 Amperes/600 Volts NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.4C/W 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.9C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 314 |
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